TIP100 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(8A,60-100V,80W)

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PLASTIC POWER TRANSISTORS
TIP100
TIP101
TIP102
NPN
TIP105
TIP106
TIP107
PNP
TO-220
Plastic Package
Intended for use in Linear Switching Applications
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)
DESCRIPTION
Collector Emitter Voltage
V_CEO
Collector Base Voltage
V_CBO
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak
Base Current
Power Dissipation upto T_c=25ºC
Power Dissipation upto T_a=25ºC
Derate above 25ºC
Operating And Storage
Junction Temperature
V_EBO
I_C
I_CM
I_B
P_D
P_D
T_j , T_stg
TIP100/105
60
60
TIP101/106
80
80
5
8
15
1
80
2
16
- 65 to +150
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
R_{th (j-c)}
R_{th (j-a)}
1.56
62.5
ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Cut Off Current
I_CEO
V_CE=30V, I_B=0
V_CE=40V, I_B=0
TIP100/105
TIP101/106
V_CE=50V, I_B=0
TIP102/107
Collector Cut Off Current
I_CBO
V_CB=60V, I_E=0
V_CB=80V, I_E=0
V_CB=100V, I_E=0
TIP100/105
TIP101/106
TIP102/107
Emitter Cut Off Current
I_EBO
V_EB=5V, I_C=0
Collector Emitter (sus) Voltage *V_CEO(sus) I_C=30mA, I_B=0
TIP100/105
TIP101/106
TIP102/107
Collector Emitter Saturation
*V_{CE (sat)}
I_C=3A, I_B=6mA
Voltage
I_C=8A, I_B=80mA
Base Emitter On Voltage
*V_BE(on)
I_C=8A, V_CE=4V
DC Current Gain
*h_FE
I_C=3A,V_CE=4V
Forward Voltage of Commutation
Diode
*V_F
I_C=8A, V_CE=4V
I_F=I_C=10A, I_B=0
*Pulse Test : Pulse Width=300 µs, Duty Cycle < 2%
Continental Device India Limited
Data Sheet
TIP102/107
100
100
UNIT
V
V
V
A
A
A
W
W
mW/ºC
ºC
MIN
60
80
100
1,000
200
ºC/W
ºC/W
MAX
50
50
50
50
50
50
8.0
2.0
2.5
2.8
20,000
6.0
UNIT
µA
µA
µA
µA
µA
µA
mA
V
V
V
V
V
V
V
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