SDC1000 Datasheet, PDF (1/3 Pages) Continental Device India Limited – SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE
3
Pin Configuration
1 = ANODE
2 = NC
3 = CATHODE
1
2
SDC1000
SOT-23
Formed SMD Package
Marking
SDC1000=ZS1
Mobile Telecomms, PCMIA & SCSI and DC-DC Conversion Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Continuous Reverse Voltage
Forward Current (DC)
Forward Voltage at I_F=1A
Average Peak Forward Current; DC=50%
Non Repetitive Forward Current t<100µs
t<10ms
Power Dissipation at T_amb=25ºC
Storage Temperature Range
Junction Temperature
SYMBOL
V_R
I_F
V_F
I_FAV
I_FSM
P_D
T_stg
T_j
VALUE
40
1.0
640
1750
12
5.2
500
- 55 to +150
125
ELECTRICAL CHARACTERISTICS
DESCRIPTION
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
(T_a=25º C unless specified otherwise)
SYMBOL TEST CONDITION MIN
V_(BR)R
*V_F
I_R=300µA
40
I_F=50mA
I_F=100mA
I_F=250mA
I_F=500mA
I_F=750mA
I_F=1.0A
I_F=1.5A
I_R
V_R=30V
MAX
320
350
420
490
560
640
760
100
DYNAMIC CHARACTERISTICS
DESCRIPTION
Diode Capacitance
Reverse Recovery when Switched From
SYMBOL
C_d
t_rr
TEST CONDITION
V_R=25V, f=1MHz
I_F=500mA to
I_R=500mA,
measured at
I_R=50mA
TYP
25
12
*Measured under pulsed conditions. Pulse width = 300µs. Duty cycle <2%
SDC1000Rev270506E
Continental Device India Limited
Data Sheet
UNIT
V
A
mV
mA
A
A
mW
o_C
o_C
UNIT
V
mV
mV
mV
mV
mV
mV
mV
µA
UNIT
pF
ns
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