PZTA42 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN high-voltage transistor

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
PZTA42
SOT-223
Formed SMD Package
For use in Telephony and Professional Communication Equipment
Complementary PZTA92
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector Base Voltage
V_CBO
300
Collector Emitter Voltage
V_CEO
300
Emitter Base Voltage
V_EBO
6.0
Collector Current (DC)
I_C
100
Collector Current Peak
I_CM
200
Base Current Peak
I_BM
100
Power Dissipation upto T_amb=25ºC
*P_D
1.2
Storage Temperature
T_stg
- 65 to +150
Junction Temperature
T_j
150
Operating Ambient Temperature
T_amb
- 65 to +150
UNITS
V
V
V
mA
mA
mA
W
ºC
ºC
ºC
THERMAL RESISTANCE
From junction to ambient
*R_{th (j-a)}
104
From junction to soldering point
R_{th (j-a)}
23
K/W
K/W
* Device Mounted on printed circuit board, single sided copper, tinplated, mounting pad for collector 1 cm².
ABSOLUTE MAXIMUM RATINGS (T_amb=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN TYP MAX UNITS
Collector Cut Off Current
Emitter Cut Off Current
I_CBO
I_EBO
V_CB=200V, I_E=0
V_EB=6V, I_C=0
20
nA
100 nA
DC Current Gain
h_FE
I_C=1mA, V_CE=10V
25
I_C=10mA, V_CE=10V
40
I_C=30mA, V_CE=10V
40
Collector Emitter Saturation Voltage
V_{CE (sat)}
I_C=20mA, I_B=2mA
0.5
V
Base Emitter Saturation Voltage
V_{BE (sat)}
I_C=20mA, I_B=2mA
0.9
V
Feedback Capacitance
C_re
V_CB=20V, f=1MHz
3.0 pF
Transition Frequency
f_T
I_C=10mA, V_CE=20V,f=100MHz 50
MHz
PZTA42Rev011104E
Continental Device India Limited
Data Sheet
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