PN4354 Datasheet, PDF (1/4 Pages) TRANSYS Electronics Limited – PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
PN4354
PN4355
PN4356
TO-92
Plastic Package
EBC
General Purpose Amplifiers
DESCRIPTION
SYMBOL
4354
4355
4356
UNITS
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current - Continuous
Power Dissipation@Ta=25°C
Power Dissipation@ Tc=25°C
Operating And Storage Junction
Temperature Range
V_CEO
V_CBO
V_EBO
I_C
P_D
P_D
T_j, T_stg
60
60
80
V
60
60
80
V
5
V
500
mA
625
mW
1.0
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
4354
4355
4356
UNITS
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector-Cut off Current
Emitter Cut off Current
V_CEO(sus)* I_C=10mA,I_B=0 (pulsed)
>60
>60
>80
V
V_CBO
V_EBO
I_C=10uA,I_E=0
I_E=10uA,I_C=0
>60
>60
>80
V
>5
V
I_CBO V_CB=50V, I_E = 0
<50
nA
Vc_B=50V, I_E = 0,
Ta =75°C
<5
uA
I_EBO V_BE =4V,I_C= 0
<100
nA
DC Current Gain
h_FE *
V_CE=10V,I_C=100uA
V_CE=10V,I_C=1mA
V_CE=10V,I_C=10mA
V_CE=10V,I_C=100mA
V_CE=10V,I_C=500mA
>25
>40
50-500
>60
>75
100-400
>25
>40
50-250
>40
>75
>40
>30
>75
>30
Commom Emitter Small
Signal Current Gain
l h_fe l I_C=50mA, V_CE=10V
f=100MHz
1.0-5.0 1.0 - 1.5 1.0 - 5.0
Collector Emitter Sat Voltage V_CE(sat) * I_C=150mA,I_B=15mA
I_C=500mA,I_B=50mA
PN4355
I_C=1A,I_B=100mA
<0.15
<0.15
<0.15
V
<0.5
<0.5
<0.5
V
<1.0
V
Continental Device India Limited
Data Sheet
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