PN2907 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
PN2907
PN2907A
TO-92
Plastic Package
EBC
Complementary Silicon Transistors for Switching and Linear Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25 º C unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
V_CEO
Collector Base Voltage
V_CBO
Emitter Base Voltage
V_EBO
Collector Current Continuous
I_C
Power Dissipation@ Ta=25 º C
P_D
Derate Above 25 º C
Power Dissipation@ Tc=25 º C
P_D
Derate Above 25 º C
Operating And Storage Junction
T_j, T_stg
Temperature Range
PN2907
40
60
5
600
625
5.0
1.5
12
-55 to +150
PN2907A
60
60
5
UNITS
V
V
V
mA
mW
mW/ º C
W
mW/ º C
ºC
THERMAL RESISTANCE
Junction to ambient
Junction to case
R_th(j-a)
R_th(j-c)
200
º C/W
83.3
º C/W
ELECTRICAL CHARACTERISTICS (Ta=25 º C Unless Specified Otherwise)
DESCRIPTION
SYMBOL TEST CONDITION PN2907
Collector Emitter Voltage
BV_CEO I_C=10mA,I_B=0
>40
Collector Base Voltage
BV_CBO I_C=10µA,I_E=0
>60
Emitter Base Voltage
BV_EBO I_E=10µA, I_C=0
>5
Collector Cut off Current
I_CBO V_CB=50V, I_E = 0
<20
PN2907A
>60
>60
>5
<10
UNITS
V
V
V
nA
Emitter Cut off Current
Base Cut off Current
DC Current Gain
Ta= 150 º C
V_CB=50V, I_E = 0
<20
I_CEX
V_CE =30V, V_EB=0.5V
<50
I_CEO V_CE=10V, I_B = 0
<10
I_EBO
V_EB=3V, I_C = 0
<10
I_BEX
V_CE =30V, V_EB=0.5V
<50
h_FE
V_CE=10V,I_C=0.1mA
>35
V_CE=10V,I_C=1mA
>50
V_CE=10V,I_C=10mA
>75
V_CE=10V*,I_C=150mA 100-300
V_CE=10V*,I_C=500mA
>30
<10
µA
<50
nA
<10
nA
<10
nA
<50
nA
>75
>100
>100
100-300
>50
Continental Device India Limited
Data Sheet
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