P2N2907 Datasheet, PDF (1/5 Pages) Continental Device India Limited – PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
P2N2907
P2N2907A
TO-92
Plastic Package
CB ^E
Designed for switching and linear applications, DC amplifier and driver for industrial applications
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL
P2N2907
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
V_CEO
V_CBO
V_EBO
40
60
5
Collector Current
I_CM
600
Total Power Dissipation @ T_a=25ºC
Derate above 25ºC
P_D
625
5
Total Power Dissipation @ T_C=25ºC
Derate above 25ºC
P_D
1.5
12
Operating and Storage Junction
Temperature Range
T_j, T_stg
- 55 to +150
P2N2907A
60
60
UNIT
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
R_{th (j-c)}
R_{th (j-a)}
83.3
ºC/W
200
ºC/W
ELECTRICAL CHARACTERISTICS (T_a=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut off Current
*V_CEO
V_CBO
V_EBO
I_CBO
I_CEX
I_CEO
I_C=10mA, I_B=0
I_C=10µA, I_E=0
I_E=10µA, I_C=0
V_CB=50V, I_E=0
V_CB=50V, I_E=0, T_a=150^oC
V_CE=30V, V_EB(off)=0.5V
V_CE=10V, I_B=0
Emitter Cut off Current
I_EBO
V_EB=3V, I_C=0
Base Cut off Current
I_BEX
V_CE=30V, V_EB(off)=0.5V
Collector Emitter Saturation Voltage *V_{CE (sat)}
I_C=150mA, I_B=15mA
I_C=500mA, I_B=50mA
Base Emitter Saturation Voltage
*V_{BE (sat)}
I_C=150mA, I_B=15mA
I_C=500mA, I_B=50mA
P2N2907
>40
>60
>5
<20
<20
<50
<10
<10
<50
<0.4
<1.6
<1.3
<2.6
P2N2907A
>60
>60
>5
<10
<10
<50
<10
<10
<50
<0.4
<1.6
<1.3
<2.6
UNIT
V
V
V
nA
µA
nA
nA
nA
nA
V
V
P2N2907_A Rev_1151204D
Continental Device India Limited
Data Sheet
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