P2N2369A Datasheet, PDF (1/4 Pages) Continental Device India Limited – NPN SILICON HIGH SPEED SWITHCHING TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON HIGH SPEED SWITHCHING TRANSISTOR
P2N2369A
TO - 92
Plastic Package
CB ^E
LOW POWER AND HIGH SPEED SWITCHING APPLICATIONS
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector Emitter Voltage
Collector Base Voltage
Collector Emitter Voltage ( V_BE=0)
Emitter Base Voltage
Collector Current Peak
Power Dissipation @ Ta=25ºC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Ambient in free air
V_CEO
V_CBO
V_CES
V_EBO
I_CM
P_D
T_j, T_stg
R_th(j-a)
15
40
40
4.5
500
625
-65 to +200
200
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Breakdown Voltage
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Base Current
Collector Emitter Saturation Voltage
SYMBOL
TEST CONDITION
BV_{CEO (sus)} * I_C=10mA, I_B=0
BV_CES I_C=10µA, V_BE=0
BV_CBO I_C=10µA, I_E=0
BV_EBO I_E=10µA, I_C=0
I_CBO V_CB=20V, I_E=0 Ta=150ºC
I_CES V_CE=20V, V_BE=0
I_B
V_CE=20V, V_BE=0
V_CE(sat)* I_C=10mA, I_B=1mA
I_C=30mA, I_B=3mA
I_C=100mA, I_B=10mA
I_C=10mA, I_B=1mA
Ta=125ºC
UNIT
V
V
V
V
mA
mW
ºC
ºC/W
VALUE
MIN
MAX
15
40
40
4.5
30
0.4
0.4
0.20
0.25
0.5
0.3
UNIT
V
V
V
V
µA
µA
µA
V
V
V
V
Continental Device India Limited
Data Sheet
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