MZT2955 Datasheet, PDF (1/4 Pages) Continental Device India Limited – SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
MZT2955 PNP
MZT3055 NPN
SOT-223
Formed SMD Package
With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator
Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Base Current
Power Dissipation upto T_c=25ºC
Derate above 25ºC
Power Dissipation upto T_a=25ºC
Derate above 25ºC
Junction Temperature
Storage Temperature
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
I_B
P_D
P_D
T_j
T_stg
VALUE
60
70
5.0
10
6.0
8.0
64
2.0
16
150
- 55 to +150
UNIT
V
V
V
A
A
W
mW/ºC
W
mW/ºC
ºC
ºC
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
R_{th (j-c)}
R_{th (j-a)}
15.6
ºC/W
62.5
ºC/W
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL
TEST CONDITION
MIN MAX UNIT
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
60
V
Collector Cut Off Current
Collector Cut Off Current
Collector Cut Off Current
I_CEX
V_CE=70V, V_{EB (off)}=1.5V
V_CE=70V, V_{EB (off)}=1.5V, T_C=150ºC
I_CBO
V_CB=70V, I_E=0
V_CB=70V, I_E=0, T_C=150ºC
I_CEO
V_CE=30V, I_B=0
1.0
mA
5.0
mA
1.0
mA
10
mA
0.7
mA
Emitter Cut Off Current
I_EBO
V_EB=5V, I_C=0
5.0
mA
DC Current Gain
*h_FE
I_C=4A, V_CE=4V
20
100
Collector Emitter Saturation Voltage
Base Emitter On Voltage
Transition Frequency
*V_{CE (sat)}
*V_BE(on)
f_T
I_C=10A, V_CE=4V
I_C=4A, I_B=400mA
I_C=10A, I_B=3.3A
I_C=4A, V_CE=4V
I_C=0.5A, V_CE=10V, f=500KHz
5
1.1
V
8.0
V
1.8
V
2
MHz
*Pulse Test : Pulse width < 300µs, Duty Cycle < 2%
MZT2955_MZT3055Rev061104E
Continental Device India Limited
Data Sheet
Page 1 of 4