MPS8598 Datasheet, PDF (1/4 Pages) Samsung semiconductor – PNP (AMPLIFIER TRANSISTOR)

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR AMPLIFIER TRANSISTORS
MPS8598
MPS8599
TO-92
Plastic Package
EBC
ABSOLUTE MAXIMUM RATINGS(T_a=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ T_a=25ºC
Derate Above 25ºC
Power Dissipation @ T_c=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Ambient in free air
Junction to Case in free air
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
P_D
P_D
T_j, T_stg
R_th(j-a)
R_th(j-c)
MPS8598 MPS8599
60
80
60
80
5
5
500
625
5.0
1.5
12
-55 to +150
200
83.3
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION MIN
Collector Emitter Breakdow Voltage
BV_CEO I_C=10mA,I_B=0
MPS8598
60
MPS8599
80
Collector Base Voltage
BV_CBO I_C=100µA,I_E=0
MPS8598
60
MPS8599
80
Emitter Base Voltage
BV_EBO I_E=10µA, I_C=0
5
Collector Cutoff Current
I_CEO
Collector Cutoff Current
I_CBO
MPS8598
V_CE=60V, I_E=0
MPS8599
Emitter Cut off Current
DC Current Gain
I_EBO
V_BE=4V, I_C = 0
h_FE
V_CE=5V,I_C=1mA
100
V_CE=5V,I_C=10mA
100
V_CE=5V,I_C=100mA*
75
*Pulse Condition: = Width < 300µs, Duty Cycle < 2%.
Continental Device India Limited
Data Sheet
MAX
100
100
100
300
UNITS
V
V
V
mA
mW
mW/ ºC
W
mW/ ºC
ºC
ºC/W
ºC/W
UNITS
V
V
V
V
V
nA
nA
nA
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