MPS6560 Datasheet, PDF (1/4 Pages) Motorola, Inc – Audio Transistor

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
EBC
AudioTransistors
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation at T_a=25ºC
Derate Above 25ºC
Power Dissipation at T_c=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_D
P_D
T_j, T_stg
THERMAL CHARACTERISTICS
Junction to Case
Junction to Ambient in free air
R_{th (j-c)}
*R_{th (j-a)}
*R_{th (j-a)} is measured with the device soldered into a typical printed circuit board
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
Collector Base Voltage
V_CBO
I_C=100µA, I_E=0
Emitter Base Voltage
V_EBO
I_E=100µA, I_C=0
Collector Cut Off Current
I_CEO
V_CE=25V, I_B=0,
Collector Cut Off Current
I_CBO
V_CB=20V, I_E=0,
Emitter Cut Off Current
I_EBO
V_EB=4V, I_C=0,
DC Current Gain
**h_FE
I_C=10mA, V_CE=1V
I_C=100mA, V_CE=1V
I_C=500mA, V_CE=1V
Collector Emitter Saturation Voltage **V_{CE (sat)}
I_C=500mA, I_B=50mA
Base Emitter (on) Voltage
**V_{BE (on)}
I_C=500mA, V_CE=1V
DYNAMIC CHARACTERISTICS
DESCRIPTION
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
f_T
C_obo
TEST CONDITION
I_C=10mA, V_CE=10V, f=30MHz
V_CB=10V, I_E=0, f=100KHz
**PulseTest: Pulse Width <300µs, Duty Cycle<2%
MPS6560_6562 Rev_1 210606E
MPS6560 NPN
MPS6562 PNP
TO-92
Plastic Package
VALUE
25
25
5.0
500
625
5.0
1.5
12
- 55 to +150
83.3
200
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
ºC/W
ºC/W
MIN
MAX
UNITS
25
V
25
V
5.0
V
100
nA
100
nA
100
nA
35
50
50
200
0.5
V
1.2
V
MIN
MAX
UNITS
60
MHz
30
pF
Continental Device India Limited
Data Sheet
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