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MPS6530 Datasheet, PDF (1/4 Pages) Motorola, Inc – Amplifier Transistor
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
EBC
AMPLIFIER TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Junction to Case
Junction to Ambient in free air
SYMBOL
VCEO
VCBO
VEBO
IC
PD
Tj, Tstg
Rth (j-c)
Rth (j-a)
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut Off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
VCEO
VCBO
VEBO
ICBO
hFE
VCE (sat)
VBE (sat)
IC=10mA, IB=0
IC=10µA, IE=0
IE=10µA, IC=0
VCB=40V, IE=0,
VCB=40V, IE=0, Ta=60ºC
IC=10mA, VCE=1V
MPS6530
MPS6531
IC=100mA, VCE=1V
MPS6530
MPS6531
IC=500mA, VCE=10V
MPS6530
MPS6531
IC=100mA, IB=10mA
MPS6530
MPS6531
IC=100mA, IB=10mA
DYNAMIC CHARACTERISTICS
DESCRIPTION
Output Capacitance
Continental Device India Limited
SYMBOL
Cobo
TEST CONDITION
VCB=10V, IE=0, f=1MHz
Data Sheet
MPS6530
MPS6531
TO-92
Plastic Package
VALUE
40
60
5
600
625
5
- 55 to +150
UNITS
V
V
V
mA
mW
mW/ºC
83.3
ºC/W
200
ºC/W
MIN
MAX
UNITS
40
V
60
V
5
V
50
nA
2.0
µA
30
60
40
120
90
270
25
50
0.5
V
0.3
V
1.0
V
MIN
MAX
7
UNITS
pF
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