MPS5172 Datasheet, PDF (1/4 Pages) Samsung semiconductor – NPN (AMPLIFIER TRANSISTOR)

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR AMPLIFIER TRANSISTOR
MPS5172
TO-92
Plastic Package
EBC
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation@ Ta=25ºC
Derate Above 25ºC
Power Dissipation@ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
V_CEO
V_CBO
V_EBO
I_C
P_D
P_D
T_j, T_stg
THERMAL RESISTANCE
Junction to ambient
Junction to case
R_th(j-a)
R_th(j-c)
VALUE
25
25
5
100
625
5.0
1.5
12
-55 to +150
200
83.3
UNITS
V
V
V
mA
mW
mW/ ºC
W
mW/ ºC
ºC
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Cut off Current
SYMBOL TEST CONDITION
V_CEO
I_CBO
I_CBO
I_CES
I_C=10mA,I_B=0
V_CB=25V, I_E = 0
V_CB=25V, I_E = 0
Ta= 100ºC
V_CE=50V, V_BE=0
MIN
25
Emitter Cut off Current
I_EBO
V_BE=5V, I_C = 0
DC Current Gain
h_FE * V_CE=10V,I_C=10mA
100
Base Emitter (Sat) Voltage
V_BE(sat) I_C=10mA,I_B=1.0mA
Base Emitter (On) Voltage
V_BE(on) I_C=10mA,I_B= 10mA
0.5
Collector Emitter (Sat) Voltage
V_CE(sat) I_C=10mA,I_B=1.0mA
*Pulse Condition: = Width =300us, Duty Cycle = 2%.
Continental Device India Limited
Data Sheet
TYP
MAX
100
10
100
UNITS
V
nA
µA
nA
100
nA
500
0.75
V
1.2
V
0.25
V
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