MJE340 Datasheet, PDF (1/3 Pages) Motorola, Inc – 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL SILICON POWER TRANSISTOR
MJE340
TO126
Plastic Package
ECB
For use in High Voltage General Purpose Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ T_a=25ºC
Derate above 25ºC
Power Dissipation @ T_c=25ºC
Derate above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
P_D
P_D
T_j, T_stg
VALUE
300
300
3.0
500
1.25
10
20
0.16
- 65 to +150
THERMAL CHARACTERISTICS
Junction to Ambient in free air
Junction to Case
R_{th (j-a)}
R_{th (j-c)}
100
6.25
ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Emitter Sustaining Voltage
*V_{CEO (sus)}
I_C=1mA, I_B=0
300
Collector Cut Off Current
I_CBO
V_CB=300V_, I_E=0
Emitter Cut Off Current
I_EBO
V_EB=3V, I_C=0
DC Current Gain
h_FE
I_C=50mA, V_CE=10V
30
UNIT
V
V
V
mA
W
mW/ºC
W
W/ºC
ºC
ºC/W
ºC/W
MAX
100
100
240
UNIT
V
µA
µA
Continental Device India Limited
Data Sheet
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