MJE243 Datasheet, PDF (1/4 Pages) Motorola, Inc – 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL SILICON POWER TRANSISTOR
MJE243
TO-126
Plastic Package
ECB
Complementary MJE253
Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Continuous Collector Current
Peak
Base Current
Total Power Dissipation @ T_c=25 ºC
Derate Above 25ºC
Total Power Dissipation @ T_a=25 ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_D
P_D
T_j, T_stg
Value
100
100
7.0
4.0
8.0
1.0
15
0.12
1.5
0.012
- 65 to +150
UNIT
V
V
V
A
A
W
W/ºC
W
W/ºC
ºC
Thermal Characteristics
Junction to Case
Junction to Ambient
R_th(j-c)
R_th(j-a)
8.34
ºC/W
83.4
ºC/W
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise )
DESCRIPTION
Collector Emitter Sustaning Voltage
Collector Cut off Current
SYMBOL
V_{CEO (Sus)}
I_CBO
TEST CONDITION
I_C=10mA, I_B=0
V_CB=100V, I_E=0
MIN
100
Emitter Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter on Voltage
T_C=125ºC
V_CB=100V, I_E=0
I_EBO
V_BE=7V, I_C=0
h_FE
I_C=200mA, V_CE=1V
40
I_C=1A, V_CE=1V
15
V_{CE (Sat)} I_C=500mA, I_B=50mA
V_{BE (Sat)}
I_C=1A, I_B=100mA
I_C=2A, I_B=200mA
V_{BE (on)}
I_C=500mA, V_CE=1V
TYP MAX UNIT
V
0.1
µA
0.1 mA
0.1
µA
180
0.3
V
0.6
1.8
V
1.5
V
Continental Device India Limited
Data Sheet
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