MJE15032 Datasheet, PDF (1/3 Pages) Motorola, Inc – 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS 50 WATTS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON EPITAXIAL POWER TRANSISTORS
MJE15032 NPN
MJE15033 PNP
TO - 220
Plastic Package
High - Frequency Drivers in Audio Amplifier
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
Collector- Base Voltage
Collector- Emitter Voltage
Emitter- Base Voltage
Collector Current Continuous
Peak
Base Current
Power Dissipation T_C=25ºC
Derate Above 25ºC
Power Dissipation T_A=25ºC
Derate Above 25ºC
Operating & Storage Junction
Temperature Range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_D
P_D
T_{j, Tstg}
250
250
5
8
16
2
50
0.4
2
0.016
- 65 to +150
Thermal Resistance
Thermal Ambient
Junction to Case
R_{th (j-a)}
R_{th (j-c)}
62.5
2.5
ELECTRICAL CHARACTERISTICS (Tc=25º C unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION MIN TYP
Collector- Emitter Sustaing Voltage V_CEO(sus)* I_C=10mA, I_B=0
250
-
Collector Cut Off Current
I_CBO V_CB=150V, I_E =0
-
-
Emitter Cut Off Current
I_EBO V_BE=5V, I_C=0
-
-
DC Current Gain
h_FE* I_C=0.5A, V_CE=5V
50
-
I_C=1.0A, V_CE=5V
50
-
I_C=2A, V_CE=5V
10
-
g f e d c ^{Collector Emitter Saturation Voltage VCE(sat) * IC=1A, IB=0.1A}
Base Emitter on Voltage
V_{BE(on) *} I_C=1.0A, V_CE=5V
-
-
-
-
Dynamic Characteristics
Current Gain - Bandwidth Product
f_{T **} I_C=500mA, V_CE=10V
30
-
`
f_test=1MHz
* Pulse Test: Pulse Width < 300µs, Duty Cycle <2 %
** f_T= Ih_fel. f_test.
UNIT
V
V
V
A
A
W
W/ºC
W
W/ºC
ºC
ºC/W
ºC/W
MAX UNIT
-
V
10
µA
10
µA
-
-
-
0.5
V
1.0
V
-
MHz
Continental Device India Limited
Data Sheet
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