MJE13004 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(4A,300-400V,75W)

Continental Device India Limited
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NPN PLASTIC POWER TRANSISTORS
MJE13004
MJE13005
TO-220
Plastic Package
Switchmode Series NPN Silicon Power Transistors
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Sustaining Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
*Peak
Base Current Continuous
*Peak
Emitter Current Continuous
*Peak
Power Dissipation upto T_a=25ºC
Derate above=25ºC
Power Dissipation upto T_c=25ºC
Derate above=25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
V_{CEO (sus)}
V_CEV
V_EBO
I_C
I_CM
I_B
I_BM
I_E
I_EM
P_D
P_D
T_j, T_stg
* Pulse Test: Pulse Width =5ms, Duty Cycle<10%
MJE13004
300
600
MJE13005
400
700
9
4
8
2
4
6
12
2
16
75
600
- 65 to +150
UNIT
V
V
V
A
A
A
A
A
A
W
mW/ºC
W
mW/ºC
ºC
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
Maxmium Lead Temperature for
Soldering Purpose 1/8" from Case for 5
Seconds
R_{th (j-c)}
R_{th (j-a)}
T_L
1.67
ºC/W
62.5
ºC/W
275
ºC
ELECTRICAL CHARACTERISTICS (T_c=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Collector Emitter sustaining voltage **V_CEO(sus)
I_C=10mA, I_B=0
MJE13004
300
MJE13005
400
Collector Cut off Current
I_CEV V_CEV=Rated Value,V_BE=(off)=1.5V
T_C=100ºC
V_CEV=Rated Value,V_BE=(off)=1.5V
Emitter Cut off Current
I_EBO
V_EB=9V, I_C=0
DC Current Gain
**h_FE
I_C=1A, V_CE=5V
10
I_C=2A, V_CE=5V
8
**Pulse Test: Pulse Width=300µs, Duty Cycle<2%
TYP
MAX
1.0
5.0
1.0
60
40
UNIT
V
V
mA
mA
mA
Continental Device India Limited
Data Sheet
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