MJE13002 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(1.5A,300-400V,40W)

Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN EPITAXIAL SILICON POWER TRANSISTORS
MJE13002
MJE13003
TO-126
Plastic Package
Suitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers and
Deflection Circuits
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Peak
Base Current Continuous
Peak
Emitter Current Continuous
Peak
Total Power Dissipation @ T_a=25ºC
Derate Above 25ºC
Total Power Dissipation @ T_C=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
V_CEO(sus)
V_CEV
V_EBO
I_C
*I_CM
I_B
*I_BM
I_E
*I_EM
P_D
P_D
T_j, T_stg
MJE13002
300
600
9.0
1.5
3.0
0.75
1.5
2.25
4.5
1.4
11.2
40
320
- 65 to 150
MJE13003
400
700
UNIT
V
V
V
A
A
A
A
A
A
W
mW/ ºC
W
mW/ ºC
ºC
THERMAL RESISTANCE
Junction to Case
R_{th (j-c)}
Junction to Ambient in free air
R_{th (j-a)}
Maximum Load Temperature for
Soldering Purposes 1/8" from Case for 5
T_L
Seconds
*Pulse Test: Pulse Width=5ms, Duty Cycle<10%
ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Sustaining Voltage
Collector Cuttoff Current
Emitter Cuttoff Current
**V_CEO(sus)
I_CEV
I_EBO
I_C=10mA, I_B=0
MJE13002
MJE13003
V_CEV=Rated Value,
V_BE(off)=1.5V
V_CEV=Rated Value,
V_BE(off)=1.5V,T_c=100ºC
V_EB=9V, I_C=0
3.12
89
275
MIN
300
400
TYP
ºC/W
ºC/W
ºC
MAX UNIT
V
V
1.0 mA
5.0 mA
1.0 mA
Continental Device India Limited
Data Sheet
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