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MJD44E3 Datasheet, PDF (1/5 Pages) Motorola, Inc – NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN DARLINGTON PLASTIC POWER TRANSISTOR
MJD44E3
DPAK (TO-252)
Plastic Package
For General Purpose Power and Switching Output or Driver Stages in Applications such as
Switching Regulators, Converters and Power Amplifiers
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Total Power Dissipation at Tc=25ºC
Derate Above 25ºC
Total Power Dissipation at Ta=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
VCEO
VEBO
IC
PD
*PD
Tj, Tstg
VALUE
80
7.0
10
20
0.16
1.75
0.014
- 55 to +150
THERMAL CHARACTERISTICS
Junction to Case
Junction to Ambient in free air
Lead Temperature for Soldering
Rth (j-c)
*Rth (j-a)
TL
6.25
71.4
260
UNIT
V
V
A
W
W/ºC
W
W/ºC
ºC
ºC/W
ºC/W
ºC
*These ratings are applicable when surface mounted on the minimum pad sizes recommended. (see page 3)
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Cut Off Current
Emitter Cut Off Current
ICES
IEBO
VCE=Rated VCEO, VBE=0
VEB=7V, IC=0
Collector Emitter Saturation Voltage
VCE (sat)
IC=5A, IB=10mA
IC=10A, IB=20mA
Base Emitter Saturation Voltage
VBE (sat)
IC=5A, IB=10mA
DC Current Gain
hFE
IC=5A, VCE=5V
MJD44E3 Rev_1 180607E
MIN TYP MAX
10
8.0
1.5
2.0
2.5
1000
UNIT
µA
mA
V
V
V
Continental Device India Limited
Data Sheet
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