MJD148 Datasheet, PDF (1/5 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLASTIC POWER TRANSISTORS
MJD148
DPAK (TO-252)
Plastic Package
Designed for General Purpose Amplifier and Low Speed Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Peak
Base Current
Total Power Dissipation at T_c=25ºC
Derate Above 25ºC
Total Power Dissipation at T_a=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
I_B
P_D
*P_D
T_j, T_stg
VALUE
45
45
5.0
4.0
7.0
50
20
0.16
1.75
0.014
- 55 to +150
THERMAL CHARACTERISTICS
Junction to Case
Junction to Ambient in free air
R_{th (j-c)}
*R_{th (j-a)}
6.25
71.4
ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN TYP
Collector Emitter Sustaining Voltage
**V_CEO(sus)
I_C=100mA, I_B=0
45
Collector Cut Off Current
I_CBO
V_CB=45V, I_E=0
Emitter Cut Off Current
I_EBO
V_EB=5V, I_C=0
DC Current Gain
**h_FE
I_C=10mA, V_CE=5V
40
I_C=0.5A, V_CE=1V
85
I_C=2A, V_CE=1V
50
I_C=3A, V_CE=1V
30
*These rating are applicable when surface mounted on the minimum pad sizes recommended
**Pulse Test:- Pulse Width < 300µs, Duty Cycle < 2%
MAX
20
1.0
375
MJD148Rev010206E
UNIT
V
V
V
A
A
mA
W
W/ºC
W
W/ºC
ºC
ºC/W
ºC/W
UNIT
V
µA
mA
Continental Device India Limited
Data Sheet
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