MJD13003 Datasheet, PDF (1/5 Pages) Continental Device India Limited – NPN SILICON PLASTIC POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLASTIC POWER TRANSISTOR
MJD13003
DPAK (TO-252)
Plastic Package
Designed for High Voltage, High Speed Power Switching Inductive Circuits Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
V_CEO
V_CEV
V_EBO
I_C
Peak
*I_CM
Base Current Continuous
I_B
Peak
*I_BM
Emitter Current Continuous
I_E
Peak
*I_EM
Total Power Dissipation at T_a=25ºC **P_D
Derate Above 25ºC
Total Power Dissipation at T_c=25ºC P_D
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
T_j, T_stg
VALUE
400
700
9.0
1.5
3.0
0.75
1.5
2.25
4.5
1.56
0.0125
15
0.12
- 65 to +150
THERMAL CHARACTERISTICS
Junction to Case
R_{th (j-c)}
Junction to Ambient in free air
**R_{th (j-a)}
Maximum Lead Temperature for
Soldering Purposes
T_L
*Pulse Test:- Pulse Width=5ms, Duty Cycle < 10%
** When Surface Mounted on Minimum Pad Sizes Recommended
8.33
80
260
ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN TYP MAX
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
400
Collector Cut Off Current
I_CEV
V_CEV=Rated Value, V_{BE (off)}=1.5V
0.1
V_CEV=Rated Value, V_{BE (off)}=1.5V, T_c=100ºC
2.0
Emitter Cut Off Current
DC Current Gain
I_EBO
***h_FE
V_EB=9V, I_C=0
I_C=0.5A, V_CE=2V
I_C=1A, V_CE=2V
1.0
8.0
40
5.0
25
***Pulse Test:- Pulse Width < 300µs, Duty Cycle < 2%
MJD13003Rev160506E
UNIT
V
V
V
A
A
A
A
A
A
W
W/ºC
W
W/ºC
ºC
ºC/W
ºC/W
ºC
UNIT
V
mA
mA
mA
Continental Device India Limited
Data Sheet
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