MJD122 Datasheet, PDF (1/5 Pages) Motorola, Inc – SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS
MJD122 NPN
MJD127 PNP
DPAK (TO-252)
Plastic Package
Designed for General Purpose Amplifier and Low Speed Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak
Base Current
Total Power Dissipation T_c=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_C
I_B
P_D
T_{j, Tstg}
VALUE
100
100
5
8
16
120
20
0.16
- 65 to +150
THERMAL CHARACTERISTICS
Junction to Case
R_{th (j-c)}
6.25
ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Sustaining Voltage
V_CEO
I_C=30mA, I_B=0
Collector Cut Off Current
I_CEO
V_CE=50V, I_B=0
Collector Cut Off Current
I_CBO
V_CB=100V, I_E=0
Emitter Cut Off Current
I_EBO
V_EB=5V, I_C=0
DC Current Gain
h_FE
I_C=4A, V_CE=4V
I_C=8A, V_CE=4V
Collector Emitter Saturation Voltage
V_{CE (sat)}
I_C=4A, I_B=16mA
I_C=8A, I_B=80mA
Base Emitter Saturation Voltage
*V_{BE (sat)}
I_C=8A, I_B=80mA
Base Emitter On Voltage
V_{BE (on)}
I_C=4A, V_CE=4V
MIN
100
1000
100
TYP MAX
10
10
2
12000
2
4
4.5
2.8
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth product
Output Capacitance
h_fe
V_CE=4V, I_C=3A, f=1MHz
4
C_ob
I_E=0, V_CB=10V, f=0.1MHz
MJD127
300
MJD122
200
Small Signal Current Gain
h_fe
I_C=3A, V_CE=4V, f=1kHz
300
*Pulse test: Pulse width < 300µs, duty cycle < 2%
MJD122_127 Rev290704E
UNIT
V
V
V
A
A
mA
W
W/ºC
ºC
ºC/W
UNIT
V
µA
µA
mA
V
V
V
V
MHz
pF
pF
Continental Device India Limited
Data Sheet
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