MJD112 Datasheet, PDF (1/6 Pages) Motorola, Inc – SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS
MJD112 NPN
MJD117 PNP
DPAK (TO-252)
Plastic Package
Designed for General Purpose Power and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Peak
Base Current
Total Power Dissipation T_c=25ºC
Derate Above 25ºC
Total Power Dissipation T_a=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_D
P_D
T_j, T_stg
VALUE
100
100
5
2
4
50
20
0.16
1.75
0.014
- 65 to +150
THERMAL CHARACTERISTICS
Junction to Case
Junction to Ambient in free air
R_{th (j-c)}
*R_{th (j-a)}
6.25
71.4
ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Sustaining Voltage
**V_CEO(sus)
I_C=30mA, I_B=0
Collector Cut Off Current
I_CEO
V_CE=50V, I_B=0
Collector Cut Off Current
I_CBO
V_CB=100V, I_E=0
V_CB=80V, I_E=0
Emitter Cut Off Current
I_EBO
V_EB=5V, I_C=0
Collector Cut Off Current
I_CEX
V_CE=80V, V_{BE (off)}=1.5V
V_CE=80V, V_{BE (off)}=1.5V,
T_c=125ºC
MIN TYP MAX
100
20
20
10
2.0
10
500
DC Current Gain
h_FE
I_C=0.5A, V_CE=3V
500
I_C=2A, V_CE=3V
1000
I_C=4A, V_CE=3V
200
*These rating are applicable when surface mounted on the minimum pad sizes recommended
12000
**Pulse Test:- Pulse Width < 300µs, Duty Cycle < 2%
MJD112_117 Rev220904E
UNIT
V
V
V
A
A
mA
W
W/ºC
W
W/ºC
ºC
ºC/W
ºC/W
UNIT
V
µA
µA
µA
mA
µA
µA
Continental Device India Limited
Data Sheet
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