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| LS4148 Datasheet, PDF (1/3 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diodes | |||
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
HIGH SPEED SILICON SWITCHING DIODES
LS4148, LS4448
Quadro MELF (LS-34)
High Speed Switching Diodes
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Peak Forward Surge Current tp=1µs
Repetitive Peak Forward Current
Forward Current
Average Forward Current
Power Dissipation up to Tj=25ºC
Junction Temperature
Storage Temperature Range
SYMBOL
VRRM
VR
IFSM
IFRM
IF
IFAV
PD
Tj
Tstg
VALUE
100
75
2
500
300
150
500
175
- 65 to +175
THERMAL RESISTANCE
Junction to Ambient
*Rth (j-a)
*Device mounted on a PC board 50mm x 50mm 1.6mm
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Forward Voltage
VF
IF=5mA
LS4448
IF=50mA
LS4148
IF=100mA LS4448
Reverse Current
IR
VR=20V
VR=20V, Tj=150ºC
VR=75V
Reverse Breakdown Voltage
VBR
IR=100µA, tp/T=0.01, tp=0.3ms
500
MIN
0.62
100
MAX
0.72
1.0
1.0
25
50
5.0
DYNAMIC CHARACTERISTICS
Diode Capacitance
Rectification Efficiency
Reverse Recovery Time
Cd
VR=0V, f=1MHz, VHF=50mV
4.0
ηr
VHF=2V, f=100MHz
45
trr
IF=10mA, to IR=60mA
4.0
RL=100 â¦
Measured @ IR=1mA
trr
IF=10mA, to IR=1mA
8.0
UNIT
V
V
A
mA
mA
mA
mW
ºC
ºC
K/W
UNIT
V
V
V
nA
µA
µA
V
pF
%
ns
ns
LS4148_LS4448 Rev270405E
Continental Device India Limited
Data Sheet
Page 1 of 3
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