DB3 Datasheet, PDF (1/4 Pages) STMicroelectronics – TRIGGER DIODES

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON DIAC
BIDIRECTIONAL TRIGGER DIODES
GLASS PASSIVATED PNPN DEVICE
DB3, DB4
DO- 35
Glass Axial Package
Functioning as a Trigger Diode with a Fixed Voltage Reference, DB3/DB4 can be
used in Conjunction with Triacs for Simplified Gate Control Circuits or as a Starting
Element in Fluorescent Lamp Ballasts
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC unless specified otherwise))
DESCRIPTION
SYMBOL
Power Dissipation on Printed Circuit (L=10mm) (T_a=50^oC)
P_tot
Repetitive Peak on-State Current (t_p=20µs, f=100Hz)
I_TRM
Storage Temperature Range
T_stg
Junction Temperature Range
T_j
VALUE
150
2
- 40 to +125
- 40 to +110
UNIT
mW
A
ºC
ºC
THERMAL RESISTANCE
Junction to Ambient in free air
Junction to Leads
R_{th (j-a)}
R_{th (j-l)}
400
150
ELECTRICAL CHARACTERISTICS (T_j=25ºC unless specified otherwise)
DESCRIPTION
* Breakover Voltage
Breakover Voltage Symmetry
* Dynamic Breakover Voltage
* Output Voltage
* Breakover Current
* Rise Time
* Leakage Current
SYMBOL
V_BO
[I+V_BOI-I-V_BOI]
I∆V+ I
V_O
I_BO
t_r
I_B
TEST CONDITIONS
** C = 22nF
see diagram 1
DB3
DB4
** C = 22nF
see diagram 1
∆1=[I_BO to I_F=10mA]
see diagram 1
see diagram 2
** C = 22nF
see diagram 3
V_B = 0.5 V_BO max
see diagram 1
MIN
28
35
5
5
TYP 1.5
MAX
36
45
+3
50
10
ºC/W
ºC/W
UNIT
V
V
V
V
V
µA
µs
µA
* Electrical characteristic applicable in both forward and reverse directions
** Connected in parallel with the devices.
DB3_DB4Rev_1 190402E
Continental Device India Limited
Data Sheet
Page 1 of 4