CVL639 Datasheet, PDF (1/5 Pages) Continental Device India Limited – SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
CVL639 NPN
CVL640 PNP
TO-92
Plastic Package
CB ^E
Driver Stages of Audio Amplifier Application
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak
Base Current Continuous
Base Current Peak
Power Dissipation @ T_a=25ºC
Power Dissipation @ T_a=25ºC
Power Dissipation @ T_c=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
P_D
*P_D
P_D
T_j, T_stg
VALUE
150
135
5.0
1.0
1.5
100
200
0.8
1.0
2.0
- 65 to +150
UNITS
V
V
V
A
A
mA
mA
W
W
W
ºC
*Transistors mounted on printed circuit board. Lead Length 4mm, mounting pad for collector lead min
10mm x 10 mm, copper
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Emitter Voltage
V_CEO
I_C=10mA, I_B=0
135
Collector Base Voltage
Emitter Base Voltage
Collector Cut Off Current
V_CBO
I_C=100µA, I_E=0
150
V_EBO
I_E=10µA, I_C=0
5.0
I_CBO
V_CB=30V, I_E=0
V_CB=30V, I_E=0, T_a=125ºC
Base Emitter On Voltage
*V_{BE (on)}
I_C=500mA, V_CE=2V
Collector Emitter Saturation Voltage *V_{CE (sat)}
I_C=500mA, I_B=50mA
DC Current Gain
h_FE
I_C=5mA, V_CE=2V
25
*I_C=150mA, V_CE=2V
80
*I_C=500mA, V_CE=2V
15
MAX
100
10
1.0
0.5
UNITS
V
V
V
nA
µA
V
V
*Pulse test: Pulse Width <300µs, Duty Cycle<2%
CVL639/640 Rev210405E
Continental Device India Limited
Data Sheet
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