CTZ26 Datasheet, PDF (1/4 Pages) Continental Device India Limited – HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD
CTZ 2.6 to 47
500mW
DO- 35
Glass Axial Package
FEATURES
These Zeners Are Best Suited For Industrial Purpose , Military & Space applications.
Hermetically Sealed Glass With Double Stud And Glass Passivated Chip Provides Excellent Stabililty and
Reliability.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Power Dissipation @T_A=25ºC P_TA
500
Surge Power Dissipation
P_S
5
tp=8.3mS
Junction Temperature
T_J
Storage Temperature
T_stg
175
-65 to+175
UNIT
mW
W
ºC
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Thermal Resistance
Junction Ambient
R_th(j-a)
VALUE UNIT
0.3 ºC/mW
Forward Voltage
at I_F=200mA
V_F
1.5
V
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DEVICE
V_ZT @ r_ZT @ I_ZT
I_ZT *
I_ZT *
MAX
r_ZK @
I_ZK *
MAX
I_ZK
Temp.
I_R @
Coeff.of
V_R
Zener Voltage
typ
(V)
(Ω) (mA) (Ω) (mA) (%/ºC )
(µA)
CTZ2.6
2.6
30 20 600 1
-0.085
75
CTZ2.7
2.7
30 20 600 1
-0.085
75
CTZ3.0
3.0
48 20 600 1
-0.075
20
CTZ 3.3
3.3
44 20 600 1
-0.070
10
CTZ 3.6
3.6
42 20 600 1
-0.065
5
CTZ3.9
3.9
40 20 600 1
-0.060
5
CTZ 4.3
4.3
36 20 600 1
-0.055
0.5
CTZ 4.7
4.7
32 20 600 1
-0.043
10
CTZ 5.1
5.1
28 20 550 1
+/-0.030
5
CTZ 5.6
5.6
16 20 450 1
+/-0.028
10
CTZ 6.2
6.2
6 210 200 1
+0.045
10
CTZ 6.8
6.8
6 20 150 1
+0.050
5
CTZ2.6_47Rev081001
V_R
I_ZM
I_ZSM
MAX MAX
(V) (mA) (mA)
1 147.8
1 168.3
1 148.5 1500
1 135 1375
1 126 1260
1 115 1165
1 105 1060
2
95 965
2
87 890
3
80 810
4
72 730
5
65 665
Continental Device India Limited
Data Sheet
Page 1 of 4