CTU83 Datasheet, PDF (1/4 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CTU83
TO-92
Plastic Package
ECB
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak
Power Dissipation @ T_a=25ºC
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_D
T_j
T_stg
VALUE
60
20
6.0
3.0
6.0
0.7
150
- 55 to +150
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION MIN
Collector Cut Off Current
I_CBO
V_CB=50V, I_E = 0
Emitter Cut Off Current
I_EBO
V_EB=5V, I_C = 0
DC Current Gain
*h_FE
V_CE=2V, I_C=500mA
100
V_CE=2V, I_C=3A
75
Collector Emitter Saturation Voltage
*V_CE(sat)
I_C=3A, I_B=60mA
Base Emitter Saturation Voltage
*V_BE(sat)
I_C=3A, I_B=60mA
Transition Frequency
f_T
I_C=50mA, V_CE=10V,
Output Capacitance
C_ob
I_E=0, V_CB=10V, f=1MHz
*Pulse Test: t_p=300µs, Duty Cycle<2%
TYP
120
45
MAX
1.0
1.0
560
0.7
1.5
UNITS
V
V
V
A
A
W
ºC
ºC
UNITS
µA
µA
V
V
MHz
pF
Continental Device India Limited
Data Sheet
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