CTN368 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CTN368
CTN369
TO-237
Plastic Package
Complementary CTN 369
Amplifier Transistors.
ABSOLUTE MAXIMUM RATINGS(Ta=25º C unless specified otherwise )
DESCRIPTION
SYMBOL
Collector -Emitter Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Total Power Dissipation @T_A=25ºC
V_CES
V_CEO
V_EBO
I_C
P_D
Derate Above =25ºC
Total Power Dissipation @T_C=25ºC
P_D
Derate Above =25ºC
Operating and Storage Junction
T_j, T_stg
Temperature Range
VALUE
25
20
5
1
1.0
6.4
2.75
22
-55 to +150
THERMAL RESISTANCE
Junction to Case
R_th(j-c)
45
Juction to Ambient
R_th(j-a)
156
ELECTRICAL CHARACTERISTICS (Ta=25º C unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut off Current
Emitter Cut off Current
Base Emitter on Voltage
Collector Emitter Saturation Voltage
DC Current Gain
V_CEO
V_CBO
V_EBO
I_CBO
I_EBO
V_BE(on)
V_CE(sat)
h_FE
I_C=10mA, I_B=0
I_C=100µA, I_E=0
I_E=100µA, I_C=0
V_CB=25V, I_E=0
I_E=0, V_CB=25V,
T_j=150ºC
V_EB=5V, I_C=0
I_C=1A, V_CE=1V
I_C=1A,I_B=100mA
I_C=5mA,V_CE=10V
I_C=500mA,V_CE=1V
I_C=1A,V_CE=1V
DYNAMIC CHARACTERISTICS
Transition Frequency
f_T
V_CE=5V, I_C=10mA,
f=20MHz
MIN MAX
20
25
5
10
1
10
1
0.5
50
85 375
60
65
UNIT
V
V
V
A
W
mW/ºC
W
mW/ºC
ºC
ºC/W
ºC/W
UNIT
V
V
V
µA
µA
V
V
MHz
Continental Device India Limited
Data Sheet
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