CSL13003 Datasheet, PDF (1/5 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR

Continental Device India Limited
An ISO/TS 16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL, HIGH SPEED,
HIGH VOLTAGE SWITCHING TRANSISTOR
CSL13003
TO-92
Plastic Package
E^CB
Applications
Suitable for Lighting, Switching Regulator and Motor Control
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter (sus) Voltage
Emitter Base Voltage
Collector Current Continuous
Peak
Power Dissipation @ T_a=25ºC
Derate Above 25ºC
Power Dissipation @ T_Lead=25ºC
Derate Above 25ºC
Operating And Storage Junction Temperature
Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
**I_CM
P_C
P_D
T_j, T_stg
VALUE
600
400
9.0
1.5
3.0
1.1
8.8
2.0
16
- 65 to +150
THERMAL RESISTANCE
Junction to Case, T_c=25ºC
R_{th (j-c)}
48.0
Junction to Lead
R_{th (j-L)}
62.5
Junction to Ambient in free air
R_{th (j-a)}
`
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
113.6
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Base Voltage
V_CBO
I_C=1mA, I_E=0
600
Collector Emitter (sus) Voltage
*V_{CEO (sus)}
I_C=10mA, I_B=0
400
Collector Cut Off Current
I_CBO
V_CB=600V_, I_E=0
V_CB=600V_, I_E=0, T_c=100ºC
Emitter Cut Off Current
I_EBO
V_EB=9V, I_C=0
DC Current Gain
*h_FE
I_C=0.3A, V_CE=2V (Note1)
10
I_C=0.5A, V_CE=2V
8.0
I_C=1A, V_CE=2V
4.0
Collector Emitter Saturation Voltage
*V_{CE (sat)}
I_C=0.5A, I_B=0.1A
I_C=1A, I_B=0.25A
I_C=1.5A, I_B=0.5A
I_C=1A, I_B=0.25A,T_c=100ºC
Base Emitter Saturation Voltage
*V_{BE (sat)}
I_C=0.5A, I_B=0.1A
I_C=1A, I_B=0.25A
I_C=1A, I_B=0.25A,T_c=100ºC
UNIT
V
V
V
A
A
W
mW/ ºC
W
mW/ ºC
ºC
ºC/W
ºC/W
ºC/W
TYP MAX
1.0
5.0
1.0
30
40
25
0.5
1.0
3.0
1.0
1.0
1.2
1.1
UNIT
V
V
mA
mA
mA
V
V
V
V
V
V
V
* Pulse Test: PW=300µs, Duty Cycle=2%
** Pulse Test: Pulse Width=5ms, Duty Cycle=10%
CSL13003Rev261103E
Continental Device India Limited
Data Sheet
Page 1 of 5