CSL13002 Datasheet, PDF (1/4 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL, HIGH SPEED,
HIGH VOLTAGE SWITCHING TRANSISTOR
CSL13002
TO-92
Plastic Package
E^CB
Applications
Suitable for Lighting, Switching Regulator and Motor Control
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ T_a=25ºC
Junction Temperature
Storage Temperature Range
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
P_D
T_j
T_stg
VALUE
400
600
9.0
1.2
1.0
150
- 55 to +150
UNIT
V
V
V
A
W
ºC
ºC
THERMAL RESISTANCE
Junction to Ambient in free air
R_{th (j-a)}
125
`
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Cut Off Current
I_CBO
V_CB=600V_, I_E=0
Emitter Cut Off Current
I_EBO
V_EB=9V, I_C=0
DC Current Gain
*h_FE
I_C=0.2A, V_CE=5V
Collector Emitter Saturation Voltage
*V_{CE (sat)}
I_C=0.3A, I_B=60mA
Base Emitter Saturation Voltage
*V_{BE (sat)}
I_C=0.3A, I_B=60mA
Storage Time
t_s
I_C=0.1A
ºC/W
MIN TYP MAX
10
10
10
40
0.8
1.2
2.0
6.0
UNIT
µA
µA
V
V
µs
Current Gain Bandwidth Product
f_T
I_C=0.1A, V_CE=10V, f=1MHz 5.0
MHz
*Pulse Test:- PW=300µs, Duty Cycle=2%
CSL13002Rev_1 200105E
Continental Device India Limited
Data Sheet
Page 1 of 4