CSDL468 Datasheet, PDF (1/4 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CSDL468
TO-92L
Plastic Package
Low Frequency Power Amplifier
Complementary CSBL562
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Current Peak
Collector Power Dissipation @ T_a=25ºC
Junction Temperature
Storage Temperature
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_C
T_j
T_stg
VALUE
25
20
5.0
1.0
1.5
0.9
150
- 55 to +150
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Base Voltage
V_CBO
I_C=10µA, I_E = 0
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B = 0
Emitter Base Voltage
V_EBO
I_E=10µA, I_C = 0
Collector Cut Off Current
I_CBO
V_CB=20V, I_E = 0
DC Current Gain
*h_FE
I_C=0.5A, V_CE=2V
Collector Emitter Saturation Voltage
*V_{CE (sat)}
I_C=0.8A, I_B=0.08A
Base Emitter On Voltage
*V_{BE (on)}
I_C=0.5A, V_CE=2V
Output Capacitance
C_ob
I_E=0, V_CB=10V, f=1MHz
Transition Frequency
f_T
I_C=500mA, V_CE=2V
MIN TYP
25
20
5.0
85
22
190
MAX
1.0
240
0.5
1.0
h_FE Classification
CSDL468Rev271205E
*Pulse Test: Pulse Width <300µs, Duty Cycle<2%
B 85 - 170, C 120 - 240
UNITS
V
V
V
A
A
W
ºC
ºC
UNITS
V
V
V
µA
V
V
pF
MHz
Continental Device India Limited
Data Sheet
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