CSD73 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON EPITAXIAL POWER TRANSISTOR

Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON EPITAXIAL POWER TRANSISTOR
CSD73
TO - 220
Plastic Package
Low Frequency High Power Amplifier
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
Collector - Base Voltage
Collector- Emitter Voltage
Emitter- Base Voltage
Collector Current
Collector Dissipation(Tc=25°C )
Operating & Storage Junction
Temperature Range
V_CBO
V_CEO
V_EBO
I_C
P_C
T_{j, Tstg}
VALUE
100
60
5
5
30
-55 to +150
UNIT
V
V
V
A
W
ºC
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector - Base Voltage
Collector- Emitter Voltage
Collector- Base Voltage
Collector Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter on Voltage
Current Gain Bandwidth Product
V_CBO
V_CEO
V_EBO
I_CBO
h_FE
V_CE(sat)
V_BE(sat)
V_BE(on)
f_T
I_C=1mA, I_E=0
I_C=20mA, I_B=0
I_E=1mA, I_C=0
V_CB=100V, I_E=0
I_C=1A, V_CE=10V
I_C=5A, I_B=0.5A
I_C=5A, I_B=0.5A
I_C=1A, V_CE=10V
I_C=0.3A, V_CE=10V
MIN TYP
100
-
60
-
5
-
-
-
70
-
-
-
-
-
-
0.75
-
20
MAX
-
-
-
5
240
2.0
1.5
-
-
UNIT
V
V
V
mA
V
V
V
MHz
Classification
h_FE
O
70 - 140
Y
120 - 240
Continental Device India Limited
Data Sheet
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