CSD667 Datasheet, PDF (1/2 Pages) Continental Device India Limited – NPN SILICON EPITAXIAL TRANSISTORS

NPN SILICON EPITAXIAL TRANSISTORS
IS/ISO 9002
IS / IECQC 700000
Lic# QSC/L- 000019.2 IS / IECQC 750100
CSD667
CSD667A
TO-237
BCE
Low Frequency Power Amplifier
Complementary CSB647/A
ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C)
DESCRIPTION
SYMBOL
Collector -Base Voltage
VCBO
Collector -Emitter Voltage
VCEO
Emitter Base Voltage
VEBO
Collector Current
IC
Peak
IC
Collector Power Dissipation
PC
Operating And Storage Junction
Tj, Tstg
Temperature Range
CSD667
120
80
5.0
1.0
2.0
0.9
-55 to +150
CSD667A
120
100
5.0
1.0
2.0
0.9
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION CSD667
Collector -Base Voltage
VCBO
IC=10uA, IE=0
>120
Collector -Emitter Voltage
VCEO
IC=1mA, IB=0
>80
Emitter Base Voltage
VEBO
IE=10uA, IC=0
>5.0
Collector Cut off Current
ICBO
VCB=100V, IE=0
<10
DC Current Gain
hFE*
IC=150mA,VCE=5V** 60-320
IC=500mA,VCE=5V** >30
Collector Emitter Saturation Voltage VCE(Sat) IC=500mA,IB=50mA** <1.0
Base to Emitter Voltage
VBE
IC=150mA,VCE=5V** <1.5
Dynamic Characteristics
Gain Bandwidth Product
ft
IC=150mA,VCE=5V** typ140
Output Capacitance
Cob
VCB=10V, f=1MHz
typ12
CSD667A
>120
>100
>5.0
<10
60-200
>30
<1.0
<1.5
typ140
typ12
CLASSIFICATION
hFE*
hFE*
**Pulse Test
CSD667
CSD667A
B
60-120
60-120
C
100-200
100-200
D
160-320
-
UNIT
V
V
V
A
A
W
deg C
UNIT
V
V
V
uA
V
V
MHz
pF
Data Sheet
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