CSD596 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
PIN CONFIGURATION (NPN)
1 = BASE
2 = EM ITTER
3 = COLLECTOR
3
CSD596
SOT-23
Formed SMD Package
1
2
Marking Code
CSD596 - C1
CSD596O- C10
CSD596Y- C1Y
Low Frequency Amplifier
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Base Current
Power Dissipation at T_a=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_D
T_j, T_stg
VALUE
30
25
5
800
160
200
- 55 to +150
Electrical Characterstics (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
CONDITIONS
MIN
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
25
Emitter Base Voltage
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
Collector Emitter Saturation
Voltage
V_EBO
I_CBO
I_EBO
h_FE
V_{CE (sat)}
I_E=1mA, I_C=0
5.0
V_CB=30V, I_E=0
V_EB=5V, I_C=0
*V_CE =1V, I_C=100mA
100
V_CE =5V, I_C=800mA
40
I_C=500mA, I_B=20mA
Base Emitter (on) Voltage
V_{BE (on)}
I_C=10mA, V_CE=1V
0.5
DYNAMIC CHARACTERISTISC
DESCRIPTION
Transition Frequency
Collector Output Capacitance
*h_FE Classfication
SYMBOL
f_T
C_ob
CONDITIONS
MIN
V_CE=5V, I_C=10mA
V_CB=10V, f=1MHz
O : 100 - 250 Y : 140 - 350
UNITS
V
V
V
mA
mA
mW
ºC
TYP MAX _UNIT
V
V
100
nA
100
nA
350
0.4
V
0.8
V
TYP MAX _UNIT
120
MHz
13
pF
CSD596Rev_1 200705E
Continental Device India Limited
Data Sheet
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