CSD545 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL TRANSISTOR
CSD545
TO-92
Plastic Package
Low Frequencty Power Amplifier And Convertor Stage Applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Peak
Colector Power Dissipation
Operating And Storage Junction
BV_CEO
BV_CBO
BV_EBO
I_C
I_CM
P_D
T_j, T_stg
Temperature Range
VALUE
25
25
5
1
1.5
600
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION MIN
Collector Emitter Breakdown Voltage BV_CEO I_C=1mA,I_B=0
25
Collector Base Breakdown Voltage
BV_CBO I_C=10µA,I_B=0
25
Emitter Base Breakdown Voltage
BV_EBO I_E=10µA, I_C=0
5
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
I_CBO V_CB=20V, I_E = 0
I_EBO V_BE=4V, I_E = 0
h_{FE (1)} V_CE=2V,I_C=50mA
60
h_{FE (2)} * V_CE=2V,I_C=1A
30
Base Emitter Saturation Voltage
Collector Emitter Saturation
Voltage
V_BE(sat)* I_C=500mA,I_B=50mA
V_CE(sat)* I_C=500mA,I_B=50mA
TYP
MAX
1.0
1.0
560
0.85 1.2
0.1 0.3
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION MIN
TYP
DYNAMIC CHARACTERISTICS
MAX
Transition Frequency
f_T I_C=50mA, V_CE=10V
180
Collector Output Capacitance
C_ob I_E=0, V_CB=10V
15
f=1MHz
UNIT
V
V
V
A
A
mW
ºC
UNIT
V
V
V
µA
µA
V
V
UNIT
MHz
pF
CLASSIFICATION
D
h_FE (1)
60-120
*Pulse Condition: Width < 300µs, Duty Cycle < 2%.
E
100-200
Continental Device India Limited
Data Sheet
F
160-320
G
280-560
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