CSD471A Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CSD471A
TO-92
BCE
ECB
Low Frequency Power Amplifier.
Complementary CSB564A
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C )
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
BVCBO
40
Collector Emitter Voltage
BVCEO
30
Emitter Base Voltage
BVEBO
5.0
Collector Current
IC
1.0
Collector Dissipation
PC
800
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
Collector -Base Voltage
BVCBO IC=100uA, IE=0
40
-
Collector Emitter Voltage
BVCEO IC=10mA, IB=0
30
-
Emitter Base Voltage
BVEBO IE=100uA, IC=0
5.0
-
Collector Cut off Current
ICBO
VCB=30V, IE=0
-
-
DC Current Gain
hFE
VCE=1V, IC=100mA 70
-
Collector Emitter Saturation Voltage VCE(Sat) IC=1A, IB=0.1A
-
-
Base Emitter Saturation Voltage
VBE(Sat) IC=1A, IB=0.1A
-
-
Dynamic Characteristics
Transition Frequency
ft
VCE=6V, IC=10mA,
-
130
Output Capacitance
Cob
VCB=6V, IE=0
-
16
f=1MHz
MAX
-
-
-
0.1
400
0.5
1.2
-
-
hFE* Classification :
O : 70-140; Y : 120-240;
G : 200-400;
UNIT
V
V
V
A
mW
deg C
deg C
UNIT
V
V
V
uA
V
V
MHz
pF
Continental Device India Limited
Data Sheet
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