CSD2470 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CSD2470
TO-92
Plastic Package
ECB
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Current Peak
Collector Power Dissipation @ T_a=25ºC
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
*I_CP
P_C
T_j
T_stg
VALUE
15
10
7.0
5.0
8.0
0.4
150
- 55 to +150
*Single Pulse=10ms
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION MIN
Collector Base Voltage
V_CBO
I_C=50µA, I_E=0
15
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
10
Emitter Base Voltage
V_EBO
I_E=50µA, I_C=0
7
Collector Cut off Current
I_CBO
V_CB=10V, I_E = 0
Emitter Cut off Current
I_EBO
V_EB=6V, I_C = 0
Collector Emitter Saturation Voltage
V_CE(sat)
I_C=3A, I_B=0.1A
DC Current Gain
h_FE
V_CE=2V, I_C=2A
270
Transition Frequency
f_T
I_C=0.05A, V_CE=6V,
f=100MHz
Output Capacitance
C_ob
I_E=0, V_CB=10V, f=1MHz
TYP
170
30
MAX
0.1
0.5
0.5
820
UNITS
V
V
V
A
A
W
ºC
ºC
UNITS
V
V
V
µA
µA
V
MHz
pF
Continental Device India Limited
Data Sheet
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