CSD1833 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON EPITAXIAL POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL POWER TRANSISTOR
CSD1833
(9AW)
TO220
MARKING : AS BELOW
Low Freq. Power AMP.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
Collector -Base Voltage
VCBO
Collector -Emitter Voltage
VCEO
Emitter Base Voltage
VEBO
Collector Current (DC)
IC
Pulse*
Collector Power Dissipation Ta 25degC
PC
Tc=25 deg C
Junction Temperature
Tj
Storage Temperature Range
Tstg
*Single Pulse Pw=100ms
VALUE
100
80
5
7
10
2
30
150
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
Collector Base Voltage
VCBO
IC=50uA, IE=0
Emitter Base Voltage
VEBO
IE=50uA,IC=0
Collector Cut off Current
ICBO
VCB=100V, IE=0
ICEO
VCE=80, IB=0
Emitter Cut off Current
IEBO
VBE=4V,IC=0
Collector Emitter Saturation Voltage
VCE(Sat)** IC=4A,IB=0,4A
Base Emitter Saturation Voltage
VBE(Sat)** IC=4A,IB=0,4A
DC Current Gain
hFE**
IC=1A, VCE=5V
MIN TYP MAX
80
-
-
100
-
-
5
-
-
-
-
10
-
-
1
-
-
10
-
-
1
-
-
1.5
60
-
320
Dynamic Characteristics
Transition Frequency
Collector Output Capacitance
hFE CLASSIFICATION**
ft
VCE=5V,IC=50mA,
-
5
-
f=5MHz
Cob
VCB=10V, IE=0
-
150
-
f=1MHz
D : 60-120; E : 100-200,
F: 160-320
MARKING
**Pulse Test
CSD
1833D
CSD
1833E
CSD
1833F
UNIT
V
V
V
A
A
W
W
deg C
deg C
UNIT
V
V
V
uA
uA
uA
V
V
MHz
pF
Continental Device India Limited
Data Sheet
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