CSD1616 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL TRANSISTOR
CSD1616
TO-92
BCE
ECB
Audio Frequency Power Amplifier And Medium Speed Switching
Complementary CSB1116/1116A
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
Collector -Base Voltage
VCBO
Collector -Emitter Voltage
VCEO
Emitter Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse)
IC*
Collector Dissipation
PC
Operating And Storage Junction
Tj, Tstg
Temperature Range
*PW=10ms, duty Cycle=50%
VALUE
60
50
6.0
1.0
2.0
0.75
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Cut off Current
ICBO
VCB=60V, IE=0
-
Emitter Cut off Current
IEBO
VEB=6V, IC=0
-
DC Current Gain
hFE(1) * IC=100mA, VCE=2V
135
hFE(2) * IC=1A, VCE=2V
81
Base Emitter On Voltage
VBE(on)* VCE=2V,IC=50mA
0.60
Collector Emitter Saturation Voltage VCE(Sat)* IC=1A, IB=50mA
-
Base Emitter Saturation Voltage
VBE(Sat)* IC=1A, IB=50mA
-
Dynamic Characteristics
Transition Frequency
ft
VCE=2V,IC=100mA,
100
Collector Output Capacitance
Cob
VCB=10V, IE=0
-
f=1MHz
SWITCHING TIMES
Turn on time
ton
VCC=10V,IC=100mA
-
Storage time
tstg
IB1=IB2=10mA,
-
Fall time
tf
VBE(off)2=3V
-
TYP
-
-
-
-
-
-
-
19
0.07
0.95
0.07
hFE(1) * CLASSIFICATION
Y: 135-270 G: 200-400
L: 300-600
*Pulse Test : PW=350us, Duty Cycle=2% Pulsed
UNIT
V
V
V
A
A
W
deg C
MAX
100
100
600
-
0.70
0.30
1.2
-
-
UNIT
nA
nA
V
V
V
MHz
pF
-
us
-
us
-
us
Continental Device India Limited
Data Sheet
Page 1 of 3