CSD1506 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN PLASTIC POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN PLASTIC POWER TRANSISTOR
CSD1506
TO126
Plastic Package
ECB
Complementary CSB1065
Low Frequency Power Amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Base Voltage(open emitter)
Collector Emitter Voltage (open base)
V_CBO
V_CEO
Emitter Base Voltage(open collector)
Collector Current (DC)
Collector Current (Pulse) (1)
Total Power Dissipation@ Tc=25°C
Total Power Dissipation@ Ta=25°C
Junction Temperature
Storage Temperature
V_EBO
I_C
I_C
P_tot
P_tot
T_j
T_stg
VALUE
>60
>50
>5.0
<3.0
<4.5
<10
<1.2
<150
-65 to +150
UNIT
V
V
V
A
A
W
W
O_C
O_C
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
Collector-Cut off Current
SYMBOL TEST CONDITION MIN TYP MAX UNIT
I_CBO I_E =0, V_CB =40V
1.0
µA
Emitter cut off Current
I_EBO V_EB =4V, I_C =0
1.0
µA
Breakdown Voltages
Saturation Voltages
V_CEO I_C =1mA, I_B =0
50
V_CBO I_C =50µA, I_E =0
60
V_EBO ^IC ^{=0, I}E ^=50µA
5
V_{CE (sat)}* ^IC^{=2A, I}B^=0.2A
V_{BE (sat)}*
V
V
V
1
V
1.5
V
DC Current Gain
h_FE* I_C=0.5A,V_CE=3V**
56
390
Output Capacitance at f=1MHz
C_O I_E =0, V_CB =10V
40
pF
Transition Frequency
f_T* I_C=0.5A, V_CE=5V
(1) Single Pulse P_W = 100ms
* Pulse test
**h_FE classification : N :56-120
Q:120-270 P: 82-180
R:180-390
90
MHz
Continental Device India Limited
Data Sheet
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