CSD1489 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN EPITAXIAL PLANAR SILICON TRANSISTOR

Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
IS/ISO 9002
IS / IECQC 700000
Lic# QSC/L- 000019.2 IS / IECQC 750100
CSD1489
TO-92
BCE
Low Frequency Power Amplifier.
Complementary CSB1058
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
BVCBO
20
Collector Emitter Voltage
BVCEO
16
Emitter Base Voltage
BVEBO
6.0
Collector Current
IC
2.0
Collector Power Dissipation
PC
0.75
Operating And Storage Junction
Tj, Tstg
-55 to +150
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
Collector -Base Voltage
BVCBO IC=10uA, IE=0
20
-
Collector Emitter Voltage
BVCEO IC=1mA, IB=0
16
-
Emitter Base Voltage
BVEBO IE=10uA, IC=0
6.0
-
Collector Cut off Current
ICBO
VCB=16V, IE=0
-
-
Emitter Cut off Current
IEBO
VEB=6V, IC=0
-
-
DC Current Gain
hFE *
VCE=2V, IC=0.1A
100
-
VCE=2V, IC=2A
75
-
Collector Emitter Saturation Voltage VCE(Sat) IC=1A, IB=0.1A
-
-
Dynamic Characteristics
Transition Frequency
ft
VCE=2V, IC=10mA,
-
80
Collector Output Capacitance
Cob
VCB=10V, IE=0
-
20
f=1MHz
hFE* Classification :
A 100-240;
B 200-400; C 350-500
UNIT
V
V
V
A
W
deg C
MAX
-
-
-
2.0
0.2
500
-
0.3
-
-
UNIT
V
V
V
uA
uA
V
MHz
pF
Continental Device India Limited
Data Sheet
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