CSD1426F Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN HIGH VOLTAGE SILICON POWER TRANSISTORS

Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN HIGH VOLTAGE SILICON POWER TRANSISTORS
IS/ISO 9002
Lic# QSC/L- 000019.2
CSD1426F
TO-3P Fully Isolated
Plastic Package
B
C
E
Colour TV Horizontal Output Applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current -Continuous
Emitter Current
Collector Power Dissipation @ Tc=25ºC
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
T_stg
VALUE
1500
600
5.0
3.5
-3.5
34
150
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Cut off Current
Emitter Base Breakdown Voltage
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Forward Voltage ( Damper Diode)
I_CBO
V_EBO
h_FE
V_CE(Sat)
V_BE(sat)
-V_F
V_CB=500V, I_E=0
I_E=200mA, I_C=0
I_C=0.5A, V_CE=5V
I_C=3A, I_B=0.8A
I_C=3A, I_B=0.8A
I_F=3.5A
MIN TYP MAX
10
5.0
8
8
1.5
2.0
DYNAMIC CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Transition Frequency
f_T
V_CE=10V, I_C= 100mA
MIN TYP MAX
3
Collector Output Capacitance
C_ob V_CB=10V, I_E=0, f=1MHz
95
UNIT
V
V
V
A
A
W
ºC
ºC
UNIT
µA
V
V
V
V
UNIT
MHz
pF
SWITCHING CHARACTERISTICS
Fall Time
t_f
I_CP=3A, I_B1(end)= 0.8A
1.0
µs
Continental Device India Limited
Data Sheet
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