CSD1306 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
PIN CONFIGURATION (NPN)
1 = BASE
2 = EM ITTER
3 = COLLECTOR
3
IS/ISO 9002
Lic# QSC/L-000019.3
CSD1306 (SAW)
SOT-23
Formed SMD Package
1
2
Marking
CSD1306E=06
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak
Power Dissipation @ T_a=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_D
T_j, T_stg
VALUE
30
15
5
700
1
200
- 55 to +150
UNITS
V
V
V
mA
A
mW
ºC
Electrical Characterstics (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
CONDITIONS
Collector Base Voltage
Collector Emitter Voltage
V_CBO
V_CEO
I_C=10µA, I_E=0
I_C=10mA, I_B=0
Emitter Base Voltage
V_EBO
I_E=1µA, I_C=0
Collector Cut off Current
I_CBO
V_CB=20V, I_E=0
Emitter Cut off Current
I_EBO
V_EB=5V, I_C=0
Base Emitter On Voltage
V_{BE (on)}
V_CE =1V, I_C=150mA
Collector Emitter Saturation
Voltage
V_{CE (sat)}
I_C=500mA, I_B=50mA
DC Current Gain
h_FE
V_CE =1V, I_C=150mA
Transition Frequency
f_T
V_CE=1V, I_C=150mA,
Output Capacitance
Input Capacitance
C_ob
V_CB=10V, f=1MHz
C_ib
V_EB=0.5V, I_C=0, f=1MHz
MIN TYP MAX _UNIT
30
V
15
V
5
V
1.0
µA
1.0
µA
1.0
V
0.5
V
250
1200
250
MHz
10
pF
100
pF
h_FE Classification
D : 250 - 500
E : 300 - 800
F : 600 -1200
CSD1306ERev_3 300103E
Continental Device India Limited
Data Sheet
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