CSD13002 Datasheet, PDF (1/4 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL, HIGH SPEED,
HIGH VOLTAGE SWITCHING TRANSISTOR
ECB
CSD13002
TO-92
Plastic Package
For Lead Free Parts,
Devices Part # will be
Perfixed with "T"
Applications
Suitable for Lighting, Switching Regulator and Motor Control
ABSOLUTE MAXIMUM RATING (T_a=25ºC )
DESCRIPTION
SYMBOL
Collector Base Voltage
V_CBO
Collector Emitter Voltage
V_CEO
Emitter Base Voltage
V_EBO
Collector Current Continuous
I_C
Collector Power Dissipation
P_D
Junction Temperature
T_j
Storage Temperature Range
T_stg
VALUE
600
400
9.0
0.5
1.0
150
- 55 to +150
UNIT
V
V
V
A
W
ºC
ºC
Junction to Ambient in free air
R_{th (j-a)}
125
ºC/W
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Collector Base Voltage
V_CBO
I_C=1mA, I_E=0
700
Collector Cut Off Current
I_CBO
V_CB=600V, I_E = 0
Emitter Cut Off Current
I_EBO
V_EB=9V, I_C=0
DC Current Gain
Collector Emitter Saturation Voltage
h_FE
V_{CE (sat)}
I_C=0.1A, V_CE=5V
18
*I_C=0.2A, V_CE=2V
14
I_C=0.4A, V_CE=5V
18
I_C=200mA, I_B=40mA
Base Emitter Saturation Voltage
V_{BE (sat)}
I_C=200mA, I_B=40mA
Storage Time
t_s
I_C=0.1A
1.5
Transition Frequency
f_T
V_CE=10V, I_C=50mA, f=1MHz 5.0
TYP MAX UNIT
V
100
µA
100
µA
40
30
0.8
V
1.2
V
5.5
µs
MHz
*h_FE Classification
Note:- Product is pre selected in DC current
gain (Groups A to E). CDIL reserves the right
to ship any of the groups according to
production availability.
A
14-19
B
18-22
C
21-25
E
24-30
MARKING
CSD
13002
A
CSD
13002
B
CSD
13002
C
CSD
13002
E
CSD13002 Rev_2 290307E
Continental Device India Limited
Data Sheet
Page 1 of 4