CSC945 Datasheet, PDF (1/4 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CCSCC8904550
TO-92
Plastic Package
ECB
Audio Frequency General Purpose and Driver Stage Amplifier Application
Complmentary CSA733
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)
DESCRIPTION
SYMBOL
Collector Base Voltage
V_CBO
Collector Emitter Voltage
V_CEO
Emitter Base Voltage
V_EBO
Collector Current Continuous
I_C
Peak
I_CM
Base Current
I_B
Collector Power Dissipation
P_C
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
T_{j, Tstg}
VALUE
60
50
5.0
100
200
20
250
2.5
- 55 to +125
UNITS
V
V
V
mA
mA
mA
mW
mW/ºC
ºC
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Cut Off Current
I_CBO
V_CB=60V, I_E = 0
Emitter Cut Off Current
I_EBO
V_EB=5V, I_C = 0
Collector Emitter Voltage
V_CEO
I_C=10mA, I_B = 0
Collector Base Voltage
V_CBO
I_C=0.1mA, I_E = 0
Emitter Base Voltage
V_EBO
I_E=10µA, I_C = 0
DC Current Gain
h_FE
*I_C=0.1mA, V_CE=6V
**I_C=1mA, V_CE=6V
Collector Emitter Saturation Voltage
*V_{CE (sat)}
I_C=100mA, I_B=10mA
Base Emitter Saturation Voltage
*V_{BE (sat)}
I_C=100mA, I_B=10mA
Base Emitter On Voltage
V_{BE (on)}
I_C=1mA, V_CE=6V
MIN
50
60
5.0
50
90
0.55
TYP
MAX
0.1
0.1
600
0.3
1.0
0.65
UNITS
µA
µA
V
V
V
V
V
V
DYNAMIC CHARACTERISTICS
DESCRIPTION
Collector Output Capacitance
Transition Frequency
Noise Figure
SYMBOL TEST CONDITION MIN TYP MAX
C_ob
I_E=0, V_CB=6V, f=1MHz
4.0
f_T
I_C=10mA, V_CE=6V,
150
450
NF
V_CE=6V, I_C=0.1mA,
15
Rg=2KΩ, f=1KHz
*Pulse Test: Pulse Width < 350µs, Duty Cycle < 2%
UNITS
pF
MHz
dB
**h_FE Classification
CSC945Rev_1 130103E
Continental Device India Limited
R : 90 - 180, Q : 135 - 270, P/G : 200 - 400, K : 300 - 600
Data Sheet
Page 1 of 4