CSC815 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL TRANSISTOR
CSC815
TO-92
CBE
Low Frequency Amplifier And High Frequency Oscillator.
Complementary CSA539
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
60
45
5
200
400
150
-55 to +150
V
V
V
mA
mW
deg C
deg C
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
MAX UNIT
Collector -Base Voltage
VCBO IC=100uA,IE=0
60
Collector -Emitter Voltage
VCEO
IC=10mA,IB=0
45
Emitter Base Voltage
VEBO
IE=10uA, IC=0
5
Collector Cut off Current
ICBO
VCB=45V, IE=0
-
Emitter Cut off Current
IEBO
VEB=3V, IC=0
-
Base Emitter On Voltage
VBE(on) VCE=10V,IC=10mA
0.6
Collector Emitter Saturation Voltage VCE(Sat) IC=150mA,IB=15mA
-
Base Emitter Saturation Voltage
VBE(Sat) IC=150mA,IB=15mA
-
DC Current Gain
hFE
IC=50mA, VCE=1V
40
-
-
V
-
-
V
-
-
V
-
100
nA
-
100
nA
-
0.90
V
-
0.40
V
-
1.1
V
-
400
Dynamic Characteristics
Transition Frequency
Collector Output Capacitance
ft
VCE=10V,IC=10mA,
100
-
Cob
VCB=10V, IE=0
-
4.0
f=1MHz
-
MHz
-
pF
hFE CLASSIFICATION
R: 40-80
Q: 70-140
Y: 120-240
G: 200-400
Continental Device India Limited
Data Sheet
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