CSC5200F Datasheet, PDF (1/2 Pages) Continental Device India Limited – NPN SILICON POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON POWER TRANSISTOR
CSC5200F
TO-3P
POWER AMPLIFIER APPLICATIONS.
Complementary CSA1943F
MAXIMUM RATINGS(Ta=25 deg C)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
160
Collector -Emitter Voltage
VCEO
160
Emitter -Base Voltage
VEBO
5.0
Collector Current
IC
12
Base Current
IB
1.2
Power Dissipation @ Tc=25 deg C
PC
90
Operating And Storage Junction
Tj, Tstg
-55 to +150
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION MIN TYP
Collector-Cuttoff Current
ICBO
VCB=160V, IE=0
-
-
Emitter-Cuttoff Current
IEBO
VEB=5V, IC=0
-
-
Collector -Emitter Voltage
VCEO
IC=50mA, IB=0
160
-
DC Current Gain
hFE
IC=1A,VCE=5V
55
-
IC=7A,VCE=5V
35
-
Collector Emitter Saturation Voltage
VCE(Sat) IC=8A, IB=0.8A
-
-
Base Emitter on Voltage
VBE(on) IC=7A,VCE=5V
-
-
Transition Frequency
ft
VCE=5V, IC=1A
-
30
Collector Output Capacitance
Cob
VCB=10V, IE=0
-
200
f=1MHz
*hFE Classification :
R : 55-110, O : 80-160
MAX
5.0
5.0
-
160
-
3.0
1.5
-
-
UNIT
V
V
V
A
A
W
deg C
UNIT
uA
uA
V
V
V
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 2