CSC460 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CSC460
TO-92
Plastic Package
High Frequency And VHF Amplifier Mixer
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
V_CEO
Collector Base Voltage
V_CBO
Emitter Base Voltage
V_EBO
Collector Current Continuous
I_C
Power Dissipation @ Ta=25ºC
P_C
Operating And Storage Junction
T_j, T_stg
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Emitter Voltage
V_CEO I_C=1mA,R_BE=0
30
Collector Base Voltage
V_CBO I_C=10µA,I_E=0
30
Emitter Base Voltage
V_EBO I_E=10µA, I_C=0
5
Collector Cut off Current
I_CBO V_CB=18V, I_E = 0
Emitter Cut off Current
I_EBO
V_EB=2V, I_C = 0
Base Emitter (on) Voltage
V_{BE (on)} I_C=2mA, V_CE=12V
Collector Emitter Saturation
V_CE(sat) I_C=10mA,I_B=1mA
Voltage
DC Current Gain
h_FE
I_C=2mA, V_CE=12V
35
VALUE
30
30
5
100
200
-55 to +125
VALUE
TYP
MAX
0.5
0.5
0.75
1.1
200
SMALL SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
f_T
I_C=2mA, V_CE=12V
C_ob
I_E=0, V_CB=10V
f=1MHz
NF
V_CE =6V,I_C=2mA
Rg=500Ω,f=1MH_Z
230
3.5
5
UNIT
V
V
V
mA
mW
ºC
UNIT
V
V
V
µA
µA
V
V
MHz
pF
dB
h_FE CLASSIFICATION
A:
35-70
B:
60-150
C:
100-200
Continental Device India Limited
Data Sheet
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