CSC4212 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN EPITAXIAL SILICON POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL SILICON POWER TRANSISTOR
CSC4212
TO-126
Plastic Package
ECB
For Colour TV Horizontal Deflection Driver
ABSOLUTE MAXIMUM RATINGS (T_c=25ºC)
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Peak Collector Current
Collector Current
Total Power Dissipation
SYMBOL
V_CBO
V_CEO
V_EBO
I_CP
I_C
P_C
Junction Temperature
T_j
Storage Temperature
T_stg
* Without heat sink
**With a 100x100x2mm A1 heat sink
Value
350
300
7.5
400
200
1.2*
5.0**
150
- 55 to +150
ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise )
DESCRIPTION
Collector Cut off Current
Emitter Cut off Current
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
DC Current Gain
Collector Emitter Saturation Voltage
SYMBOL
I_CBO
I_EBO
V_CBO
V_CEO
V_EBO
h_FE
V_{CE (sat)}
TEST CONDITION
V_CB=200V, I_E=0
V_EB=5V, I_C=0
I_C=100µA, I_E=0
I_C=5mA, I_B=0
I_E=100µA, I_C=0
I_C=10mA, V_CE=10V
I_C=50mA, I_B=5mA
MIN
350
300
7.5
40
Dynamic Characteristics
Transition Frequency
Output Capacitance
f_T
I_C=10mA, V_CB=30V,
50
f=200MHz
C_ob I_E=0,V_CB=50V, f=1MHz
TYP
UNIT
V
V
V
mA
mA
W
W
ºC
ºC
MAX
2.0
2.0
250
1.0
UNIT
µA
µA
V
V
V
V
MHz
4.5
pF
Continental Device India Limited
Data Sheet
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