CSC4115 Datasheet, PDF (1/3 Pages) Continental Device India Limited – NPN EPITAXIAL PLANAR SILICON TRANSISTOR

Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
IS/ISO 9002
IS / IECQC 700000
Lic# QSC/L- 000019.2 IS / IECQC 750100
CSC4115
(9AW)
TO-92
BCE
MARKING : CSC
4115
BC
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
BVCBO
40
Collector Emitter Voltage
BVCEO
20
Emitter Base Voltage
BVEBO
6.0
Collector Current
IC
2.0
Collector Current Peak
ICP*
5.0
Collector Power Dissipation
PC
0.4
Operating And Storage Junction
Tj, Tstg
-55 to +150
Temperature Range
*Single Pulse Pw=10ms
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
Collector -Base Voltage
BVCBO IC=50uA, IE=0
40
-
Collector Emitter Voltage
BVCEO IC=1mA, IB=0
20
-
Emitter Base Voltage
BVEBO IE=50uA, IC=0
6.0
-
Collector Cut off Current
ICBO
VCB=30V, IE=0
-
-
ICEO
VCE=20V, IB=0
-
-
Emitter Cut off Current
IEBO
VEB=5V, IC=0
-
-
DC Current Gain
hFE
VCE=2V, IC=0.1A
120
-
Collector Emitter Saturation Voltage VCE(Sat) IC=2A, IB=0.1A
-
-
Dynamic Characteristics
Transition Frequency
ft
VCE=2V, IC=0.5A,
-
150
f=100MHz
Collector Output Capacitance
Cob
VCB=10V, IE=0
-
25
f=1MHz
Hfe Classifications
A 120-270; B 180-390; C 270-560;
UNIT
V
V
V
A
A
W
deg C
MAX
-
-
-
0.1
1.0
0.1
560
1.0
UNIT
V
V
V
uA
uA
uA
V
-
MHz
-
pF
"For BC" 180- 560
Continental Device India Limited
Data Sheet
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